Control of p-type conduction in Mg doped monophase CuCrO2 thin layers p-ტიპის გამტარობის მართვა

Author: Tamar Tchelidze
Co-authors: A.Shengelaya, M. Chikoidze, M. Boshta, M. Gomaa, D. Daraselia, D. Japaridze, Y. Dumont, M. Neumann-spallart
Keywords: transparent conductive oxides, Hole conductivity
Annotation:

In this work our goal was to clarify the origin of hole conduction in undoped and Mg-doped CuCrO2 oxide in order to have possibility to control it by corresponding growth parameters. A chemical spray pyrolysis procedure for deposition of p-type semiconductor thin films is described. As-deposited films were amorphous. Formation of highly crystalline CuCrO2 and Mg-doped CuCrO2 films with single phase delafossite structure was realized by annealing between 600°C and 960°C in nitrogen atmosphere. The carrier concentration and the point defects of samples are calculated by using the developed Kroger method of quasi-chemical reactions. p-type conductivity was observed in undoped and Mg doped CuCrO2 sample predicted, with predicted n˜1018cm-3 carrier concetrations. The electrical resistivity for a 4% Mg doped sample was 1.4 Ω·cm with a Seebeck coefficient of +130 µV/K at 40°C. By EPR spectroscopy Cr3+ and Cu2+ related defects were studied.